Design of a Ka-Band Receiver Using 28-nm CMOS Process
نویسندگان
چکیده
This study presents a Ka-band direct-conversion receiver using 28-nm CMOS (Complimentary Metal Oxide Semiconductor) process for radar applications. The designed includes LNA (Low-Noise Amplifier), Mixer, and Baseband amplifier. adopts two-stage cascode amplifier structure. Then, the mixer is single-balanced passive with low flicker noise. At end, baseband transimpedance fat FET (Field-Effect-transistor) noise current-mode operation of mixer. LO (Local Oscillator) signal driving supplied externally. performance tested on-wafer probing an air test performed by integrating microstrip antenna. total conversion gain, figure, 3 dB bandwidth are 28 dB, 6.1 6 GHz, respectively. chip size 0.320 mm2.
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ژورنال
عنوان ژورنال: The Journal of Korean Institute of Electromagnetic Engineering and Science
سال: 2022
ISSN: ['2288-226X', '1226-3133']
DOI: https://doi.org/10.5515/kjkiees.2022.33.5.410